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APTCV60TLM99T3G
Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module
Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 30A @ Tc = 80C CoolMOSTM Q1, Q4: VDSS = 600V ; ID = 17A @ Tc = 80C
Application * Solar converter * Uninterruptible Power Supplies Features * Q2, Q3 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * * Q1, Q4 CoolMOSTM Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 ...
Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
March, 2009
All ratings @ Tj = 25C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTCV60TLM99T3G - Rev 0
APTCV60TLM99T3G
Q1 & Q4 Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 600 22 17 75 20 99 110 11 1.2 800 Unit V A V m W A mJ
Tc = 25C
Q1 & Q4 Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VGS = 0V VDS = 600V Tj = 125C VGS = 10V, ID = 18A VGS = VDS, ID = 1.2 mA VGS = 20 V, VDS = 0V Min Typ 100 2.5 3 99 3.5 100 Max 50 Unit A m V nA
Q1 & Q4 Dynamic Characteristics Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf RthJC Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Junction to Case Thermal Resistance Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 18A VGS = 10V VBus = 400V ID = 18A RG = 3.3 Min Typ 2800 130 14 20 60 10 5 60 5 1.15
C/W
Max
Unit pF
nC
ns
Q2 & Q3 Absolute maximum ratings
TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C
March, 2009 2-9 APTCV60TLM99T3G - Rev 0
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Max ratings 600 50 30 60 20 90 60A @ 550V
Unit V A V W
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APTCV60TLM99T3G
Q2 & Q3 Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 30A Tj = 150C VGE = VCE , IC = 400A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 300 Unit A V V nA
5.0
Q2 & Q3 Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc RthJC Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Junction to Case Thermal Resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=30A VCE=300V Inductive Switching (25C) VGE = 15V VBus = 300V IC = 30A RG = 10 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 30A RG = 10 Tj = 25C VGE = 15V Tj = 150C VBus = 300V IC = 30A Tj = 25C RG = 10 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 1600 110 50 0.3 110 45 200 40 120 50 250 60 0.16 0.3 0.7 1.05 150 1.6 ns Max Unit pF C
ns
mJ mJ A
C/W
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APTCV60TLM99T3G
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V IF = 30A VR = 400V Test Conditions VR=600V Tj = 25C Tj = 125C Tc = 80C Min 600 Typ Max 25 500 30 1.8 2.2 1.5 25 160 35 480 0.6 1.2 2.2 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
CR2, CR3, CR7 & CR8 diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Err RthJC Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy Junction to Case Thermal Resistance IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V IF = 30A VR = 800V Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 30 2.6 3.2 1.8 300 380 360 1700 1.6 1.2 3.1 V ns nC mJ C/W Unit V A A
di/dt =200A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
di/dt =1000A/s
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B
March, 2009 4-9 APTCV60TLM99T3G - Rev 0
Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
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APTCV60TLM99T3G
Thermal and package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 175* 125 100 4.7 110
Unit V C N.m g
* Tjmax = 150C for Q1 & Q4
SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
Q2 & Q3 Typical performance curve
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 80
VCE=300V D=50% R G=1 0 T J=1 50C T c =85C
60
40
20
Hard switching
0 0 10 20 IC (A) 30 40
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28
APTCV60TLM99T3G
Output Characteristics (VGE=15V) Output Characteristics 60
TJ = 150C VGE=19V
60
TJ=25C
50
TJ=125C
50
TJ=150C
IC (A)
40 30 20 10 0 0 0.5 1
TJ=25C
40 IC (A) 30 20
VGE=13V VGE=15V
VGE=9V
10 0
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
60 50 40
Transfert Characteristics 2
TJ=25C
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 10 TJ = 150C
1.5 E (mJ) IC (A) 1 0.5
TJ=25C
Eoff
30 20
TJ=150C
Eon
10 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 2.5 2 E (mJ) 1.5 1 0.5
Eon
0 0 10 20 30 IC (A) Reverse Bias Safe Operating Area 70 60 50 IC (A) 40 30 20 10 0 70 0
VGE=15V TJ=150C RG=10
40
50
60
VCE = 300V VGE =15V IC = 30A TJ = 150C
Eon
Eoff
0 0 10 20 30 40 50 60 Gate Resistance (ohms)
100
200
300 400 VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1 0.8 0.6 0.4 0.2 1.2 0.9
0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
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APTCV60TLM99T3G
Q1 & Q4 Typical performance curve
1.2 Thermal Impedance (C/W) 1
0.7
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.8 0.6 0.4 0.2
0.5 0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=10, 20V
6.5V
80
6V
BVDSS, Drain to Source Breakdown Voltage
120 ID, Drain Current (A)
Breakdown Voltage vs Temperature 675
650
40
4.5V
625
0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 100
limited by RDSon
600 25 50 75 100 125 TJ, Junction Temperature (C)
20
DC Drain Current vs Case Temperature 25 ID, DC Drain Current (A) 20 15 10 5 0
ID, Drain Current (A)
100 s
10
1
Single pulse TJ=150C TC=25C
10 ms
0.1 1 10 100 1000 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 10000 1000 Coss 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Ciss
25
50 75 100 125 TC, Case Temperature (C)
150
10 8 6 4 2 0
Gate Charge vs Gate to Source Voltage VDS=400V ID=18A TJ=25C
0
10
20 30 40 Gate Charge (nC)
50
60
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APTCV60TLM99T3G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode 80
60 IF (A)
TJ=125C
40
TJ=25C
20
0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 2.4
Energy losses vs Collector Current 1 0.75 E (mJ) 0.5 0.25 0 0 20 40 IC (A) 60 80
VCE = 400V VGE = 15V RG = 2.5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1
0.75 E (mJ)
0.5
VCE = 400V VGE =15V IC = 30A TJ = 125C
0.25
0 0 2 4 6 8 Gate Resistance (ohms) 10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.4 1.2 1 0.8 0.6 0.4 0.2
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
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Rectangular Pulse Duration (Seconds)
APTCV60TLM99T3G
CR2, CR3, CR7 & CR8 Typical performance curve
Forward Current vs Forward Voltage 80 IF, Forward Current (A)
TJ=125C
60
40
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) Energy losses vs Collector Current 2.5 2 E (mJ) E (mJ) 1.5 1 0.5 0 0 20 40 IC (A) 60 80
VCE = 800V VGE = 15V RG = 5 TJ = 125C
Switching Energy Losses vs Gate Resistance 1.8 1.6 1.4 1.2 1 0.8 0.6 0 10 20 30 Gate resistance (ohms)
VCE = 800V VGE =15V IC = 30A TJ = 125C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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0 0.00001
0.01
0.1
1
10

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